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In a common‑emitter configuration, which statement correctly describes the relationship between collector current (Ic) and base current (Ib) for a silicon NPN transistor operating in the active region?
Ic ≈ β × Ib
Ic = VCE / RE
Ic ≈ α × IE
Ic = β × (VBE – 0.7 V)
Ic ≈ β × Ib
In the active region, a bipolar junction transistor (BJT) acts as an amplifier where the collector current (Ic) is directly proportional to the base current (Ib) through the common-emitter current gain (β).
In the active region, a bipolar junction transistor (BJT) acts as an amplifier where the collector current (Ic) is directly proportional to the base current (Ib) through the common-emitter current gain (β).
Ic≈β×Ib — Collector current in common-emitter mode
β=1−αα — Relationship between common-emitter and common-base current gains
In a silicon NPN transistor operating in the active region, the emitter-base junction is forward-biased and the collector-base junction is reverse-biased. Electrons injected from the emitter into the base mostly diffuse across to the collector due to the strong reverse-bias electric field, establishing the collector current as a multiple (β) of the base current.
The emitter-base junction is forward-biased and the collector-base junction is reverse-biased in the active region.
The common-emitter current gain β typically ranges between 50 and 300 for standard silicon BJTs.
Collector current is primarily controlled by the input base current in the common-emitter configuration.
High current gain and power gain
Widely used in voltage and power amplification stages
Sensitive to temperature variations affecting β and leakage current
Lower bandwidth compared to common-base configurations
Audio and radio-frequency amplifiers
Linear voltage regulators and electronic switches
Option A is correct because Ic≈β×Ib defines the active region relationship in a common-emitter configuration.
Option C (Ic≈α×IE) corresponds to the common-base configuration.
A is correct — The collector current in a common-emitter configuration operating in the active region is approximately equal to the product of the base current and the common-emitter current gain (Ic≈β×Ib).
Remember the conversion formula β=1−αα as exam questions frequently require interconverting common-base and common-emitter parameters.