Examoogle
ExamsTest SeriesRank CheckPrevious Year PapersPassBook StoreMy BooksAI Tutor
ЁЯЫТ0
рдЕA
Examoogle

India's most trusted platform for competitive exam PDF books. Expert-authored, watermark-protected, instant access.

Exams & Practice
All Exams & SyllabusMock Test SeriesPrevious Year PapersPractice Questions (MCQs)Recruitment Notifications
Quick Links
Examoogle AI TutorExam NewsBook StoreMy BooksLogin / Sign Up
Support
About UsRefund PolicyPrivacy PolicyTerms of UseContact Us
┬й 2026 Examoogle. India's #1 competitive exam AI tutor.
ЁЯФТ SSL SecuredЁЯУ▒ UPI AcceptedЁЯз╛ GST Invoice
Examoogle

Join 60,000+ competitive exam aspirants

or with email
By continuing, you agree to ourTerms of Service&Privacy Policy
Your Cart
SubtotalтВ╣0
TotalтВ╣0
Examoogle тАв User тАв info@examoogle.com тАв EE-2024-8821
Chapter 1 of 12 тАв Page 1 of 248ЁЯФТ Protected PDF тАв Watermarked
Back to Practice Questions
ElectricalElectrical Materials
PrevNext

Semiconductors have

A

Zero coefficient of resistivity

B

Negative coefficient of resistivity

C

Positive coefficient of resistivity

D

Infinite coefficient of resistivity

Correct Answer

Concept & PrincipleElectricalElectrical Materials
Option B

Negative coefficient of resistivity

Quick Summary: Semiconductors exhibit a negative temperature coefficient of resistivity (TCR), meaning their electrical resistivity decreases as temperature increases. This property arises because thermal energy excites more charge carriers from the valence band to the conduction band, significantly increasing conductivity despite increased lattice scattering.

ЁЯТб Explanation

Semiconductors exhibit a negative temperature coefficient of resistivity (TCR), meaning their electrical resistivity decreases as temperature increases. This property arises because thermal energy excites more charge carriers from the valence band to the conduction band, significantly increasing conductivity despite increased lattice scattering.

ЁЯФв Key Formulas

╧Б(T)=╧Б0[1+╬▒(TтИТT0)]\rho(T) = \rho_0 [1 + \alpha(T - T_0)]╧Б(T)=╧Б0тАЛ[1+╬▒(TтИТT0тАЛ)], where ╬▒<0\alpha < 0╬▒<0 for semiconductors

ni=NcNveтИТEg2kTn_i = \sqrt{N_c N_v} e^{-\frac{E_g}{2kT}}niтАЛ=NcтАЛNvтАЛтАЛeтИТ2kTEgтАЛтАЛ тАФ Intrinsic carrier concentration vs temperature

тЪЩя╕П Working Principle

In a semiconductor, the number of free charge carriers is highly temperature-dependent, governed by the Boltzmann distribution. As temperature rises, the rate of carrier generation (nin_iniтАЛ) increases exponentially according to niтИЭeтИТEg2kTn_i \propto e^{-\frac{E_g}{2kT}}niтАЛтИЭeтИТ2kTEgтАЛтАЛ. This increase in carrier concentration far outweighs the reduction in carrier mobility caused by lattice vibrations (phonons), resulting in a net decrease in resistivity.

ЁЯУМ Key Points
  • тЦ╕

    Metals have a positive temperature coefficient (resistivity increases with temperature).

  • тЦ╕

    Semiconductors have a negative temperature coefficient (resistivity decreases with temperature).

  • тЦ╕

    At absolute zero (0 K), pure semiconductors behave as perfect insulators.

  • тЦ╕

    The energy band gap (EgE_gEgтАЛ) determines the thermal sensitivity of the material.

тЬЕ Advantages
  • тЦ╕

    Allows for sensitive temperature sensing (Thermistors).

  • тЦ╕

    Enables variable conductance control in electronic devices.

тЭМ Disadvantages / Limitations
  • тЦ╕

    Thermal instability in power electronic circuits.

  • тЦ╕

    Requires cooling/heatsinks for high-power semiconductor applications.

ЁЯЫая╕П Applications / Uses
  • тЦ╕

    Thermistor manufacturing for temperature measurement.

  • тЦ╕

    Integrated circuits and transistors.

  • тЦ╕

    Solar cells and photovoltaic converters.

ЁЯУД Additional Information
  • тЦ╕

    The negative coefficient is a direct consequence of the exponential increase in the number of charge carriers (electrons and holes) as thermal energy exceeds the bandgap.

  • тЦ╕

    Option C refers to conductors (like Copper), and Option A describes materials like Manganin or Constantan used in precision resistors.

ЁЯУК Diagram / Illustration
Resistivity (╧Б) vs Temperature (T)Temperature (T)Resistivity (╧Б)
тЬЕ

B is correct тАФ Semiconductors possess a negative temperature coefficient of resistivity because the increase in charge carrier density with temperature dominates over the decrease in carrier mobility.

Core Concepts Used
Click any tag to open in AI Tutor
Band Theory Charge Carrier Concentration Temperature Coefficient of Resistance (TCR)
ЁЯТб EXAM TIP

Remember: Metals (conductors) gain resistance as they heat up, whereas Semiconductors (intrinsic) become better conductors as they heat up due to thermal excitation of electron-hole pairs.

Related Questions

ElectricalElectrical Materials
A laser beam has intensity that can be used to cut
ElectricalElectrical Materials
The colour of light is determined by its
ElectricalElectrical Materials
Metastable state is one where the atom resides for
ElectricalElectrical Materials
The end faces of discharge tube of He-Ne laser system are tilted at Brewster angle
ElectricalElectrical Materials
Gas lasers are highly used in industries due to

Discussion (0)

Loading discussion...
PrevNext