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The MOSFET combines the areas of _______ & _________
field effect & MOS technology
semiconductor & TTL
mos technology & CMOS technology
none of the mentioned
field effect & MOS technology
The MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a hybrid concept that leverages the voltage-controlled field effect to modulate current flow through a channel defined by MOS manufacturing technology. It integrates the operational principle of controlling charge carrier density via an electric field with the structural advantages of Metal-Oxide-Semiconductor silicon processing.
The MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a hybrid concept that leverages the voltage-controlled field effect to modulate current flow through a channel defined by MOS manufacturing technology. It integrates the operational principle of controlling charge carrier density via an electric field with the structural advantages of Metal-Oxide-Semiconductor silicon processing.
IDтАЛ=21тАЛ╬╝nтАЛCoxтАЛLWтАЛ(VGSтАЛтИТVthтАЛ)2 тАФ Drain current in saturation region
CoxтАЛ=toxтАЛ╧╡oxтАЛтАЛ тАФ Oxide capacitance per unit area
The device operates by applying a voltage to the Gate electrode, which creates an electric field through the thin silicon-dioxide insulating layer. This field induces a conductive inversion layer (channel) between the Source and Drain, allowing current to flow. The MOS technology provides the high-impedance gate structure, while the field effect provides the mechanism for switching.
The Gate is electrically isolated from the channel by a thin SiO2тАЛ layer, resulting in extremely high input impedance.
MOSFETs are majority-carrier devices, leading to faster switching speeds compared to BJTs.
The manufacturing process is compatible with integrated circuit (IC) fabrication techniques.
Power MOSFETs are used for high-frequency switching in power converters.
Extremely high input impedance
High switching speed
Low gate drive power requirement
Susceptible to electrostatic discharge (ESD) damage
Higher on-state resistance (RDS(on)тАЛ) at high voltage ratings
Power electronics converters (SMPS, Inverters)
VLSI digital circuits
Analog amplifiers
Option B refers to TTL (Transistor-Transistor Logic) which is based on BJT technology, entirely different from the unipolar nature of MOSFETs.
The term 'Field Effect' refers to the modulation of channel conductance by the transverse electric field.
A is correct тАФ The MOSFET merges the physical mechanism of the field effect with the architectural benefits of MOS (Metal-Oxide-Semiconductor) manufacturing technology.
Always remember that MOSFETs are unipolar devices (only one type of carrier flows) whereas BJTs are bipolar devices (both electrons and holes participate in conduction).