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Back to Practice Questions
ElectricalElectronics
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The resistivity of pure silicon is about _______.

A

100┬а╬й┬аcm100\text{ }\Omega\text{ cm}100┬а╬й┬аcm

B

6000┬а╬й┬аcm6000\text{ }\Omega\text{ cm}6000┬а╬й┬аcm

C

3├Ч10┬░5┬а╬й┬аcm3 \times 10┬░5\text{ }\Omega\text{ cm}3├Ч10┬░5┬а╬й┬аcm

D

1.6├Ч10┬░тИТ8┬а╬й┬аcm1.6 \times 10┬░{-8}\text{ }\Omega\text{ cm}1.6├Ч10┬░тИТ8┬а╬й┬аcm

Correct Answer

тЪЩя╕П TE тАв Technical Concept & PrincipleElectricalElectronics
Option B

6000┬а╬й┬аcm6000\text{ }\Omega\text{ cm}6000┬а╬й┬аcm

Quick Summary:

Pure (intrinsic) silicon at room temperature (300┬аK300\text{ K}300┬аK) has a high electrical resistivity due to a low concentration of charge carriers. The standard value for intrinsic silicon resistivity is approximately 6000┬а╬й┬аcm6000\text{ }\Omega\text{ cm}6000┬а╬й┬аcm.

тЪЩя╕ПTETechnical SolutionConcept & Principle
ЁЯТб Explanation

Pure (intrinsic) silicon at room temperature (300┬аK300\text{ K}300┬аK) has a high electrical resistivity due to a low concentration of charge carriers. The standard value for intrinsic silicon resistivity is approximately 6000┬а╬й┬аcm6000\text{ }\Omega\text{ cm}6000┬а╬й┬аcm.

ЁЯФв Key Formulas

╧Б=1╧Г\rho = \frac{1}{\sigma}╧Б=╧Г1тАЛ тАФ Resistivity is the reciprocal of conductivity

╧Г=q(n╬╝n+p╬╝p)\sigma = q(n\mu_n + p\mu_p)╧Г=q(n╬╝nтАЛ+p╬╝pтАЛ) тАФ Conductivity depends on charge carrier concentration and mobility

тЪЩя╕П Working Principle

In an intrinsic semiconductor, the number of free electrons (nnn) equals the number of holes (ppp), denoted as nin_iniтАЛ. Resistivity (╧Б\rho╧Б) is the inverse of conductivity (╧Г\sigma╧Г), defined by ╧Б=1q(ni╬╝n+pi╬╝p)\rho = \frac{1}{q(n_i\mu_n + p_i\mu_p)}╧Б=q(niтАЛ╬╝nтАЛ+piтАЛ╬╝pтАЛ)1тАЛ, where ╬╝n\mu_n╬╝nтАЛ and ╬╝p\mu_p╬╝pтАЛ are mobilities. Because nin_iniтАЛ is very small in pure silicon, the denominator is low, resulting in a relatively high resistivity compared to metals.

ЁЯУМ Key Points
  • тЦ╕

    Intrinsic silicon resistivity is temperature-dependent.

  • тЦ╕

    Increasing temperature creates more electron-hole pairs, significantly decreasing resistivity.

  • тЦ╕

    Doping the silicon with impurities drastically lowers the resistivity.

тЬЕ Advantages
  • тЦ╕

    Ideal for creating controllable PN junctions

  • тЦ╕

    High sensitivity to temperature (used in thermistors)

тЭМ Disadvantages / Limitations
  • тЦ╕

    High resistivity makes it unsuitable for low-loss power transmission

  • тЦ╕

    Performance is highly sensitive to thermal fluctuations

ЁЯЫая╕П Applications / Uses
  • тЦ╕

    Fabrication of transistors and diodes

  • тЦ╕

    Semiconductor substrate for Integrated Circuits

ЁЯУД Additional Information
  • тЦ╕

    Germanium has a much lower intrinsic resistivity of approximately 45┬а╬й┬аcm45\text{ }\Omega\text{ cm}45┬а╬й┬аcm compared to silicon.

  • тЦ╕

    Option D represents the resistivity of a good conductor like copper (1.68├Ч10┬░тИТ8┬а╬й┬аm1.68 \times 10┬░{-8}\text{ }\Omega\text{ m}1.68├Ч10┬░тИТ8┬а╬й┬аm).

ЁЯУК Diagram / Illustration
Resistivity Definition
╧Б=1╧Г\rho = (1 / \sigma)╧Б=╧Г1тАЛ
Where ╧Г=q(n╬╝n+p╬╝p)\sigma = q(n\mu_n + p\mu_p)╧Г=q(n╬╝nтАЛ+p╬╝pтАЛ)
тЬЕ

B is correct тАФ Pure silicon acts as an intrinsic semiconductor with a resistivity of approximately 6000┬а╬й┬аcm6000\text{ }\Omega\text{ cm}6000┬а╬й┬аcm at room temperature.

Core Concepts Used
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Intrinsic Semiconductors Charge Carrier Mobility Resistivity-Conductivity Relationship
ЁЯТб EXAM TIP

Remember that resistivity of semiconductors decreases exponentially with temperature, while for metals, it increases linearly.

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