The three terminals of the IGBT are

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gate, emitter & collector Explanation: The Insulated Gate Bipolar Transistor (IGBT) is a three-terminal semiconductor device that combines the best features of both the MOSFET and the BJT. Its three terminals are the Gate (G), which provides high input impedance, and the Collector (C) and Emitter (E), which handle the power conduction path. Working Principle: The IGBT operates as a voltage-controlled device. Applying a positive gate-to-emitter voltage ($V_{GE}$) creates a conducting channel (inversion layer) in the MOSFET portion of the device, which acts as the base current for the internal PNP bipolar transistor. This dual-structure allows the device to have the high-speed switching capability of a MOSFET and the low on-state conduction loss characteristic of a BJT. Key Formulas: $I_C = I_{MOS} + I_{PNP}$ — Total collector current is the sum of MOSFET and BJT current components.; $P_{loss} = V_{CE(sat)} imes I_C$ — Power loss in the ON state proportional to saturation voltage. Key Points: IGBT is a minority carrier device, unlike the majority carrier MOSFET.; It possesses high input impedance, reducing gate drive circuit complexity.; The device is susceptible to 'latch-up' if the internal parasitic thyristor structure is triggered. Advantages: High switching speed compared to power BJTs; Low gate drive power requirement; Excellent current handling capability Disadvantages: Presence of 'current tailing' effect during turn-off; Potential for latch-up failure mode; Higher cost than standard MOSFETs in low voltage applications Applications: Variable Frequency Drives (VFDs); Electric Vehicle (EV) traction inverters; Renewable energy inverters Additional Info: The gate terminal in an IGBT is electrically isolated from the main power path, similar to a MOSFET gate.. Options A and D reference a 'Base', which is specific to a BJT (Bipolar Junction Transistor).. Option B refers to the terminals of a MOSFET (Gate, Source, Drain). Answer: C is correct — The three terminals of the IGBT are the Gate, Emitter, and Collector. Exam Tip: In competitive exams, remember that IGBTs are the preferred choice for medium-to-high voltage and frequency applications where both conduction and switching losses need to be balanced.

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